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PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 18N60P IXTV 18N60P IXTV 18N60PS
V = 600 V DSS
ID25 = 18 A ≤ RDS(on) 420 mΩ
Symbol
V DSS
VDGR V
GS
VGSM ID25 IDM IAR E
AR
EAS
dv/dt
PD T
J
TJM Tstg TL TSOLD Md Weight
Test Conditions
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Tranisent
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
T C
= 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
5
Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P PLUS220 & PLUS220SMD
Maximum Ratings TO-3P (IXTQ)
600
V
600
V
±30
V
±40
V
G D
S
18
A
54
A
PLUS220 (IXTV)
18
A
30
mJ
1.0
J
10
V/ns
G DS
D (TAB) D (TAB)
360
-55 ... +150 150
-55 ...
IXTV18N60P Datasheet
