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IXTV22N50PS - Power MOSFET

Download the IXTV22N50PS datasheet PDF. This datasheet also covers the IXTV22N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Avalanche Rated z Fast Intrinsic Diode z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTV22N50P-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTV22N50PS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTV22N50PS. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXTV) IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLUS220SMD (IXTV_S) VDSS...

View more extracted text
IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLUS220SMD (IXTV_S) VDSS = 500V ID25 = 22A ≤RDS(on) 270mΩ trr(typ) = 400ns TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight G DS D (TAB) G S D (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings 500 500 ± 30 ± 40 V V V V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 22 50 22 750 10 350 -55 ... +150 A A A mJ V/ns W °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering Plastic Body for 10s 300 °C 260

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTV22N50P N-Channel MOSFET INCHANGE

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