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IXTV26N50PS - Power MOSFET

This page provides the datasheet information for the IXTV26N50PS, a member of the IXTQ26N50P Power MOSFET family.

Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99206E(12/05) Symbol gfs Ciss Coss Crss t d(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV26N50PS Test Conditions Characteristic Values (T J = 25° C, unless otherwise specified) Min. Typ. Max. VDS = 20 V; ID = 0.5.

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PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS VDSS = ID25 = ≤ RDS(on) 500 V 26 A 230 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD T J TJM Tstg TL TSOLD Md Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuos Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 PLUS220 & PLUS220SMD 500 V G D 500 V S ±30 V TO-268 (IXTT) ±40 V D (TAB) 26 A 78 A G S 26 A 40 mJ PLUS220 (IXTV) 1.
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