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IXTV86N25T Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXTV86N25T datasheet PDF. This datasheet also includes the IXTH86N25T variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXTH86N25T-IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 = RDS(on) ≤ 250V 86A 37mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAS EAS PD TJ TJM Tstg TL TSOLD Md F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings 250 V 250 V ± 30 V 86 A 75 A 190 A 10 A 1.5 J 540 W -55 ...

+150 °C 150 °C -55 ...

+150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in.

Key Features

  • (TAB) D = Drain TAB = Drain z International standard packages z Avalanche rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTV86N25T N-Channel MOSFET INCHANGE

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