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IXTY1N80P - Power MOSFET

Download the IXTY1N80P datasheet PDF. This datasheet also covers the IXTA1N80P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z International Standard Packages z Fast Intrinsic Rectifier z Avalanche Rated z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density.

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Note: The manufacturer provides a single datasheet file (IXTA1N80P-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTY1N80P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTY1N80P. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID25 = ≤RDS(on) 800V 1A 1...

View more extracted text
TA1N80P IXTP1N80P IXTU1N80P IXTY1N80P VDSS = ID25 = ≤RDS(on) 800V 1A 14Ω TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight G S (TAB) GD S (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062) from Case for 10s Plastic Body for 10s Mounting Torque TO-263 TO-220 TO-252 TO-251 (TO-220) Maximum Ratings 800 800 V V ±20 V ±30 V 1A 2A 1A 75 mJ 5 42 -55 ... +150 150 -55 ... +150 300 260 1.13 / 10

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