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IXTY1R4N60P - Power MOSFET

Download the IXTY1R4N60P datasheet PDF. This datasheet also covers the IXTU1R4N60P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTU1R4N60P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTY1R4N60P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTY1R4N60P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSO...

View more extracted text
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-251 TO-252 TO-220 Maximum Ratings 600 V 600 V 30 V 40 V 1.4 A 2.1 A 1.4 A 75 mJ 10 V/ns 50 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 1.13 / 10 Nm/lb.in 0.40 g 0.35 g 3.

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