Overview: XPTTM 650V IGBT GenX4TM IXXH110N65B4 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V I = 110A C110 V 2.10V CE(sat) tfi(typ) = 43ns Symbol
VCES V
CGR
VGES VGEM
I
C25
ILRMS IC110 ICM
SSOA (RBSOA)
t sc
(SCSOA)
P C
T J
TJM T
stg
T L
M d
Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient T = 25°C (Chip Capability) C
Terminal Current Limit
TC = 110°C
TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load V = 15V, V = 360V, T = 150°C GE CE J RG = 82, Non Repetitive T = 25°C C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s
Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 250 A 160 A 110 A 570 A ICM = 220 A VCE VCES 10 µs 880 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 1.13/10 6 Nm/lb.in. g Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) BVCES IC = 250µA, VGE = 0V V GE(th) I = 250µA, V = V C CE GE I V = V , V = 0V CES CE CES GE T = 150°C J IGES VCE = 0V, VGE = ±20V V CE(sat) I = 110A, V = 15V, Note 1 C GE T = 150°C J Characteristic Values Min. Typ. Max. 650 V 4.0 6.5 V 10 µA 500 µA ±100 nA 1.72 2.05 2.
