Overview: XPTTM 600V IGBT GenX3TM w/ Diode IXXH50N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 600V I = 50A C110 V 2.30V CE(sat) tfi(typ) = 42ns Symbol
VCES V
CGR
VGES VGEM
I
C25
IC110 IF110 ICM
I A
EAS
SSOA (RBSOA)
tsc (SCSOA)
PC TJ TJM T
stg
TL
M d
Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C, R GE = 1M Continuous Transient T = 25°C (Chip Capability) C
TC = 110°C TC = 110°C
TC = 25°C, 1ms T = 25°C C
TC = 25°C V GE = 15V, T VJ = 150°C, R G = 5 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 22, Non Repetitive
TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10s Mounting Torque Maximum Ratings 600 V 600 V ±20 V ±30 V 100 A 50 A 30 A 200 A 25 A 200 mJ I = 100 A CM @ VCES 10 µs 600 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 1.13/10 6 Nm/lb.in. g Symbol Test Conditions (T J = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V V GE(th) I
C = 250A, V CE = V GE I V = V , V = 0V CES CE CES GE T J = 150C IGES VCE = 0V, VGE = 20V V CE(sat) I = 36A, V = 15V, Note 1 C GE T J = 150C Characteristic Values Min. Typ. Max. 600 V 3.0 5.5 V 25 A 3 mA 100 nA 1.95 2.45 2.
