IXYH40N120B3D1 Description
+150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6g TO-247 AD G CE G = Gate E = Emitter Tab C = Collector Tab = Collector.
IXYH40N120B3D1 is IGBT manufactured by IXYS .
+150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6g TO-247 AD G CE G = Gate E = Emitter Tab C = Collector Tab = Collector.