Overview: 1200V XPTTM IGBT GenX3TM w/ Diode IXYH40N120B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = IC110 = V ≤CE(sat) tfi(typ) = 1200V 40A
2.9V 183ns Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
Continuous Transient TC = 25°C (Chip Capability) TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 10Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Mounting Torque Maximum Ratings 1200 1200 V V ±20 V ±30 V 86 A 40 A 25 A
180 A 20 A 400 mJ ICM = 80
≤@VCE VCES
480 A W -55 ... +150 150
-55 ... +150 °C °C °C 300 °C 260 °C 1.13/10 Nm/lb.in.
