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IXYH40N65C3D1 - IGBT

Key Features

  • Optimized for 20-60kHz Switching.
  • Square RBSOA.
  • Anti-Parallel Fast Diode.
  • Avalanche Rated.
  • Short Circuit Capability Advantages.
  • High Power Density.
  • Extremely Rugged.
  • Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 40A, VGE = 15V, Note 1 TJ = 150C Characteristic Valu.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYH40N65C3D1 IXYQ40N65C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 150°C, RG = 10 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-247 TO-3P Maximum Ratings 650 V 650 V ±20 V ±30 V 80 A 40 A 50 A 180 A 20 A 300 mJ ICM = 80 A  @VCE VCES 5 μs 300 -55 ...