Overview: Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Diode IXYH50N65C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching VCES = 650V IC110 = 50A VCE(sat) 2.10V tfi(typ) = 26ns Symbol
VCES VCGR
VGES VGEM
IC25 IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
Continuous Transient TC = 25°C TTCC = 110°C = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive
TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Mounting Torque Maximum Ratings 650 V 650 V ±20 V ±30 V 132 A 50 A 50 A
250 A 25 A 400 mJ ICM = 100
@VCE VCES
8 A μs 600
-55 ... +175 175
-55 ... +175
300 260
1.13/10
6 W
°C °C °C
°C °C
Nm/lb.in
g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 36A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 650 V 3.5 6.0 V 50 A 1.25 mA 100 nA 1.73 2.10 2.
