IXYH50N65C3D1 Description
650 V 3.5 6.0 V 50 A 1.25 mA 100 nA 1.73 2.10 2.10 V V TO-247 (IXYH) G CE Tab G = Gate E = Emitter C = Collector Tab = Collector.
IXYH50N65C3D1 Key Features
- Optimized for 20-60kHz Switching
- Square RBSOA
- Anti-Parallel Fast Diode
- Avalanche Rated
- Short Circuit Capability
- International Standard Package
- High Power Density
- Extremely Rugged
- Low Gate Drive Requirement