Overview: Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/ Diode
Extreme Light Punch through IGBT for 20-60kHz Switching IXYH75N65C3D1 VCES = 650V IC110 = 75A VCE(sat) 2.3V tfi(typ) = 60ns Symbol
VCES VCGR VGES VGEM
IICLR25MS IC110 IF110 ICM
IA EAS
SSOA (RBSOA)
tsc (SCSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TTeC rm=in2a5l°CCu(rCrehnipt Capability) Limit TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 3 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive
TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
Mounting Torque Maximum Ratings
650 650
±20 ±30 V V
V V 175 A 160 A
75 A 66 A
360 A 30 A 300 mJ ICM = 150
VCE VCES
8 A μs 750
-55 ... +175 175
-55 ... +175
300 260
1.13/10
6 W
°C °C °C
°C °C
Nm/lb.in
g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min. Typ. Max.
650 V
3.5 6.0 V
25 A 3 mA
100 nA
1.8 2.3 V 2.
