Datasheet4U.com

IXYN100N65B3D1 - Diode

IXYS

📥 Download Datasheet

IXYN100N65B3D1 Datasheet Preview — Preview of IXYN100N65B3D1 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXYN100N65B3D1
Manufacturer	IXYS
File Size	226.27 KB
Description	Diode
Datasheet	IXYN100N65B3D1-IXYS.pdf

IXYN100N65B3D1 Product details

Features

International Standard Package.
miniBLOC, with Aluminium Nitride Isolation.
2500V~ Isolation Voltage.
Anti-Parallel Diode.
Optimized for 10-30kHz Switching.
Square RBSOA.
Short Circuit Capability.
High Current Handling Capability Advantages.
High Power Density.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 1.

📁 IXYN100N65B3D1 Similar Datasheet

IXYA20N120C3HV - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYB82N120C3H1 - High-Speed IGBT (IXYS Corporation)
IXYH20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYH50N120C3 - High-Speed IGBT (IXYS Corporation)
IXYH50N120C3D1 - High-Speed IGBT (IXYS Corporation)
IXYH82N120C3 - 1200V XPT IGBT (IXYS Corporation)
IXYP20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)

Other Datasheets by IXYS

IXYN100N65A3 - IGBT
IXYN100N65C3H1 - Diode
IXYN100N120B3H1 - IGBT
IXYN100N120C3 - High-Speed IGBT
IXYN100N120C3H1 - High-Speed IGBT
IXYN110N120A4 - Ultra Low-Vsat PT IGBT

Published: Jul 20, 2016 |