IXYP10N65B3D1 Description
+175 300 260 1.13/10 2.5 W °C °C °C °C °C Nm/lb.in. 650 V 4.0 6.5 V 10 A 350 A 100 nA 1.74 2.00 1.95 V V GC E Tab G = Gate E = Emitter C = Collector Tab = Collector.
IXYP10N65B3D1 Key Features
- Optimized for 5-30kHz Switching
- Square RBSOA
- Avalanche Rated
- Anti-Parallel Fast Diode
- Short Circuit Capability
- International Standard Package
- High Power Density
- Extremely Rugged
- Low Gate Drive Requirement