IXYP10N65B3D1 - IGBT

Features

Optimized for 5-30kHz Switching.
Square RBSOA.
Avalanche Rated.
Anti-Parallel Fast Diode.
Short Circuit Capability.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement.

IXYP10N65B3D1 IGBT by IXYS - Datasheet Preview — Datasheet preview – IXYP10N65B3D1

Datasheet Details

Part number	IXYP10N65B3D1
Manufacturer	IXYS (now Littelfuse)
File Size	188.55 KB
Description	IGBT
Datasheet	IXYP10N65B3D1 Datasheet
Additional preview pages of the IXYP10N65B3D1 datasheet.

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Full PDF Text Transcription

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Advance Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYP10N65B3D1 Extreme Light Punch Through IGBT for 5-30kHz Switching VCES = 650V IC110 = 10A VCE(sat)  1.95V tfi(typ) = 30ns TO-220 Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 50 Clamped Inductive Load VGE = 15V, VCE = 400V, TJ = 150°C RG = 150, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.

Published: Jul 20, 2016 |