Datasheet4U.com

IXYP20N65C3D1M - Extreme Light Punch Through IGBT

IXYS

📥 Download Datasheet

IXYP20N65C3D1M Datasheet Preview — Preview of IXYP20N65C3D1M PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IXYP20N65C3D1M
Manufacturer	IXYS
File Size	259.97 KB
Description	Extreme Light Punch Through IGBT
Datasheet	IXYP20N65C3D1M-IXYS.pdf

IXYP20N65C3D1M Product details

Features

Optimized for 20-60kHz Switching.
Plastic Overmolded Tab for Electrical Isolation.
Square RBSOA.
Avalanche Rated.
Anti-Parallel Fast Diode.
Short Circuit Capability.
2500V~ Electrical Isolation.
International Standard Package Advantages.
High Power Density.
Extremely Rugged.
Low Gate Drive Requirement Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = V.

📁 IXYP20N65C3D1M Similar Datasheet

IXYP20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYA20N120C3HV - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYB82N120C3H1 - High-Speed IGBT (IXYS Corporation)
IXYH20N120C3 - 1200V XPT GenX3 IGBTs (IXYS Corporation)
IXYH50N120C3 - High-Speed IGBT (IXYS Corporation)
IXYH50N120C3D1 - High-Speed IGBT (IXYS Corporation)
IXYH82N120C3 - 1200V XPT IGBT (IXYS Corporation)

Other Datasheets by IXYS

Published: Jul 20, 2016 |