Datasheet Summary
LGB15N41ATI, LGD15N41ATI 410 V, 15 A N-Channel Ignition IGBT
Agency Approvals
Environmental Approvals
Pinout Diagram
TO-252 (DPAK)
Functional Diagram
TO-263 (D2PAK)
Product Summary
Characteristic VCES IC
Value 410 15
Unit V A
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) Features monolithic circuitry integrating ESD inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
- - DPAK Package Offers Smaller Footprint and
Increased Board Space
- G
- Voltage Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- New Design...