Datasheet4U Logo Datasheet4U.com

MDI550-12A4 - IGBT Module

Key Features

  • q NPT IGBT technology q low saturation voltage q low switching losses q switching frequency up to 30 kHz q square RBSOA, no latch up q high short circuit capability q positive temperature coefficient for easy parallelling q MOS input, voltage controlled q ultra fast free wheeling diodes q package with DCB ceramic base plate q isolation voltage 4800 V q UL registered E72873 Advantages q space and weight savings q reduced protection circuits Typical.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MDI5N40 N-Channel MOSFET MagnaChip
MDI011036Q +5V/-28V PIN Diode Switch Driver Monzite
MDI145-12A3 IGBT IXYS Corporation
MDI150-12A4 IGBT IXYS Corporation
MDI1752 N-Channel Trench MOSFET MagnaChip

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MDI100-12A3 IGBT Module
MDI200-12A4 IGBT Module
MDI300-12A4 IGBT Modules
MDI75-12A3 IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MID 550-12 A4 MDI 550-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA I = 670 A C25 V CES = 1200 V V = 2.3 V CE(sat) typ. MID 3 MDI 3 8 19 1 3 2 1 11 10 9 8 11 10 2 2 E 72873 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot IGBT TJ Tstg VISOL Md Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms  VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 1.8 W, non repetitive VGE= ±15 V, TJ = 125°C, RG = 1.8 W Clamped inductive load, L = 100 mH TC = 25°C 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) dS dA a Weight Creepage distance on surface Strike distance through air Max.