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MIXA30WB1200TMI - XPT IGBT

Key Features

  • / Advantages:.
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MIXA30WB1200TED IGBT
MIXA30W1200TED XPT IGBT
MIXA30W1200TML XPT IGBT
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MIXA10W1200TML XPT IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XPT IGBT Module MIXA30WB1200TMI tentative 3~ Rectifier Brake Chopper 3~ Inverter VRRM = I DAV = I FSM = 1600 V VCES = 1200 V VCES = 1200 V 105 A IC25 = 28 A IC25 = 43 A 320 A V =CE(sat) 1.8 V V =CE(sat) 1.8 V 6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC Part number MIXA30WB1200TMI P P1 T1 G1 G3 G5 L1 L2 BU V W L3 T2 GB G2 G4 G6 Backside: isolated N NB EU EV EW Features / Advantages: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.