* / Advantages:
* High level of integration - only one power semiconductor module required for the whole drive
* Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
* Thin wafer technology com
MIXA600CF650TSF Datasheet (119.51 KB)
MIXA600CF650TSF
IXYS
119.51 KB
Xpt igbt.
XPT IGBT Module Common collector + free wheeling diodes Part number MIXA600CF650TSF MIXA600CF650TSF tentative VCES = 650 V I C25 = 2x 720 A V = CE(sa.
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