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MIXA600CF650TSF - XPT IGBT

Key Features

  • / Advantages:.
  • High level of integration - only one power semiconductor module required for the whole drive.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic.
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat).
  • Temperature sense included.
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MIXA60HU1200VA XPT IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XPT IGBT Module Common collector + free wheeling diodes Part number MIXA600CF650TSF MIXA600CF650TSF tentative VCES = 650 V I C25 = 2x 720 A V = CE(sat) 1.65 V Backside: isolated Features / Advantages: ● High level of integration - only one power semiconductor module required for the whole drive ● Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.