MIXD50W650TED Description
Six-Pack Trench XPT IGBT MIXD50W650TED VCES = 650 V IC25 = 71 A VCE(sat) typ.
MIXD50W650TED Key Features
- Easy paralleling due to the positive temperature coefficient of the on-state voltage
- short circuit rated for 10 µsec
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
- Thin wafer technology bined with the XPT design results in a petitive low VCE(sat)
- SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
- AC motor drives