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MIXD600PF650TSF - XPT IGBT

Key Features

  • / Advantages:.
  • High level of integration - only one power semiconductor module required for the whole drive.
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic.
  • Trench XPT design - low VCEsat - low Eoff.
  • Temperature sense included.
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MIXD50W650TED Trench XPT IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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XPT IGBT Module Phase leg + free wheeling Diodes + NTC MIXD600PF650TSF VCES = 2x 650 V IC25 = 750 A VCE(sat) = 1.5 V tentative Part number MIXD600PF650TSF 5 2 1 8 7 9 Backside: isolated E72873 3 4 6 10/11 Features / Advantages: • High level of integration - only one power semiconductor module required for the whole drive • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec.