MKI100-12F8 - IGBT Module
= 3.3 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13, 21 1 2 3 4 14, 20 9 10 19 15 11 12 MKI Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 5.6 Ω; TVJ = 125°C RBSOA; clamped inductive load;
MKI100-12F8 Features
* Fast NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits
* HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage curre
