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MKI100-12F8 - IGBT Module

Key Features

  • Fast NPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits.
  • HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current.
  • Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MKI100-12E8 IGBT Modules
MKI50-12F7 IGBT Module
MKI75-06A7 IGBT Module
MKI75-06A7T IGBT Module
MKI75-12E8 IGBT Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advanced Technical Information MKI 100-12F8 IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 125 A V CES = 1200 V VCE(sat) typ. = 3.3 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13, 21 1 2 3 4 14, 20 9 10 19 15 11 12 MKI Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 V V TC = 25°C TC = 80°C VGE = ±15 V; RG = 5.6 Ω; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH V CE = 900 V; VGE = ±15 V; R G = 5.6 Ω; TVJ = 125°C SCSOA; non-repetitive 125 85 200 VCES 10 A A A µs TC = 25°C 640 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.