MKI50-12F7 Description
Advanced Technical Information MKI 50-12F7 IGBT Modules H Bridge Short Circuit SOA Capability Square RBSOA IC25 = 65 A V CES = 1200 V VCE(sat) typ. non-repetitive 65 45 100 VCES 10 A A A µs TC = 25°C 350 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. TVJ = 25°C TVJ = 125°C I = 2 mA;.
MKI50-12F7 Key Features
- Fast NPT IGBTs
- low saturation voltage
- positive temperature coefficient for easy paralleling
- fast switching
- short tail current for optimized performance also in resonant circuits
- HiPerFREDTM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
- Industry Standard Package