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MKI75-06A7 - IGBT Module

Key Features

  • NPT IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • switching frequency up to 30 kHz.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy parallelling.
  • MOS input, voltage controlled.
  • ultra fast free wheeling diodes.
  • solderable pins for PCB mounting.
  • package with copper base plate.
  • UL registered, E 72873 Advantages.
  • sp.

📥 Download Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
MKI75-06A7T IGBT Module
MKI75-12E8 IGBT Module
MKI100-12E8 IGBT Modules
MKI100-12F8 IGBT Module
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MKI 75-06 A7 MKI 75-06 A7T IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA IC25 = 90 A VCES = 600 V VCE(sat) =typ. 2.1 V Type: MKI 75-06 A7 MKI 75-06 A7T NTC - Option: without NTC with NTC 13 T1 D1 T5 D5 1 T 9 2 10 16 14 T T2 D2 T6 D6 3 11 4 12 17 IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 90 60 VGE = ±15 V; RG = 18 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 120 VCEK ≤ VCES V CE = V; CES VGE = ±15 V; R G = 18 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 280 W Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.