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MKI75-06A7T - IGBT Module

Download the MKI75-06A7T datasheet PDF. This datasheet also covers the MKI75-06A7 variant, as both devices belong to the same igbt module family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • NPT IGBT technology.
  • low saturation voltage.
  • low switching losses.
  • switching frequency up to 30 kHz.
  • square RBSOA, no latch up.
  • high short circuit capability.
  • positive temperature coefficient for easy parallelling.
  • MOS input, voltage controlled.
  • ultra fast free wheeling diodes.
  • solderable pins for PCB mounting.
  • package with copper base plate.
  • UL registered, E 72873 Advantages.
  • sp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MKI75-06A7-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MKI 75-06 A7 MKI 75-06 A7T IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA IC25 = 90 A VCES = 600 V VCE(sat) =typ. 2.1 V Type: MKI 75-06 A7 MKI 75-06 A7T NTC - Option: without NTC with NTC 13 T1 D1 T5 D5 1 T 9 2 10 16 14 T T2 D2 T6 D6 3 11 4 12 17 IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 90 60 VGE = ±15 V; RG = 18 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 120 VCEK ≤ VCES V CE = V; CES VGE = ±15 V; R G = 18 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 280 W Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min.