MUBW50-12T8 Overview
sine 50 Hz TC = 25°C Maximum Ratings 1600 V 50 A 140 A 850 A 125 W Symbol VF IR RthJC Conditions IF = 50 A; (per diode) TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Characteristic Values (TVJ = 25°C, unless otherwise specified) min. 1.15 1.3 1.05 V V 0.05 mA 0.8 mA 1.0 K/W Application:.
MUBW50-12T8 Key Features
- High level of integration
- only one power semiconductor module required for the whole drive
- IGBT technology with low saturation voltage, low switching losses and tail current, high RBSOA and short circuit ruggedn
- Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery
- Industry standard package with insulated copper base plate and soldering pins for PCB mounting
- Temperature sense included
- LS di/dt
- D6 Symbol Conditions IF25 TC = 25°C IF80 TC = 80°C