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R1158NS24P - Distributed Gate Thyristor

Download the R1158NS24P datasheet PDF. This datasheet also covers the R1158NS24N variant, as both devices belong to the same distributed gate thyristor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (R1158NS24N-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Date:- 9 May, 2003 Data Sheet Issue:- 1 Distributed Gate Thyristor Type R1158NS24# to R1158NS26# (Old Type Number: D350CH20-26) Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1) MAXIMUM LIMITS 2400-2600 2400-2600 2400-2600 2500-2700 UNITS V V V V IT(AVM) IT(AVM) IT(AVM) IT(RMS) IT(d.c.) ITSM ITSM2 I2t I2t (di/dt)cr VRGM PG(AV) PGM Tj op Tstg OTHER RATINGS Maximum average on-state current, Tsink=55°C, (note 2) Maximum average on-state current. Tsink=85°C, (note 2) Maximum average on-state current. Tsink=85°C, (note 3) Nominal RMS on-state current, Tsink=25°C, (note 2) D.C.