R3636EC16N Description
Tsink=85°C (note 2) Maximum average on-state current. Tsink=85°C (note 3) Nominal RMS on-state current, Tsink=25°C (note 2) D.C.
R3636EC16N is Distributed Gate Thyristor manufactured by IXYS.
| Part Number | Description |
|---|---|
| R3636EC16K | Distributed Gate Thyristor |
| R3636EC16L | Distributed Gate Thyristor |
| R3636EC16M | Distributed Gate Thyristor |
| R3636EC16P | Distributed Gate Thyristor |
| R3636EC16R | Distributed Gate Thyristor |
Tsink=85°C (note 2) Maximum average on-state current. Tsink=85°C (note 3) Nominal RMS on-state current, Tsink=25°C (note 2) D.C.