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IXYS

R3968FD28N Datasheet Preview

R3968FD28N Datasheet

Distributed Gate Thyristor

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WESTCODE
An IXYS Company
Date:- 17 Oct 2007
Data Sheet Issue:- 3
Provisional Data
Distributed Gate Thyristor
Types R3968F#20x to R3968F#28x
Development Type Number: RX075F#20x-28x
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
2000-2800
2000-2800
2000-2800
2100-2900
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
Non-repetitive
Critical rate of rise of on-state current (note 6) Repetitive (50Hz, 60s)
Continuous (50Hz)
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
4001
2691
1582
7988
6712
66.0
72.5
21.78×106
26.28×106
1000
500
250
5
4
50
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
V
W
W
°C
°C
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 1 of 12
October, 2007




IXYS

R3968FD28N Datasheet Preview

R3968FD28N Datasheet

Distributed Gate Thyristor

No Preview Available !

WESTCODE An IXYS Company
Characteristics
Distributed Gate Types R3968F#20x to R3968F#28x
PARAMETER
VTM Maximum peak on-state voltage
VT0 Threshold voltage
rT Slope resistance
(dv/dt)cr Critical rate of rise of off-state voltage
IDRM Peak off-state current
IRRM Peak reverse current
VGT Gate trigger voltage
IGT Gate trigger current
VGD Gate non-trigger voltage
IH Holding current
tgd Gate controlled turn-on delay time
tgt Turn-on time
Qrr Recovered charge
Qra Recovered charge, 50% Chord
Irm Reverse recovery current
trr Reverse recovery time
tq Range of maximum turn-off time (note 2)
RthJK
F
Wt
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
200
-
-
-
-
-
-
-
-
-
-
-
-
50
60
-
-
81
-
-
TYP. MAX. TEST CONDITIONS (Note 1)
-
-
-
-
-
-
-
-
-
-
0.8
2.0
2600
1700
360
9.5
-
-
-
-
-
2.8
2.0
2.20 ITM=6000A
1.453
0.125
- VD=80% VDRM, Linear ramp, Gate o/c
200 Rated VDRM
200 Rated VRRM
3.0
600 Tj=25°C
VD=10V, IT=3A
0.25
1000
2.0
3.0
Rated VDRM
Tj=25°C
VD=67% VDRM, ITM=4000A, di/dt=60A/µs,
IFG=2A, tr=0.5µs, Tj=25°C
3200
- ITM=4000A, tp=2000µs, di/dt=60A/µs,
- Vr=100V
-
70
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=20V/µs
100
ITM=4000A, tp=2000µs, di/dt=60A/µs,
Vr=100V, Vdr=67%VDRM, dVdr/dt=200V/µs
0.0065 Double side cooled
0.0130 Single side cooled
99
- Outline options FC & FT
- Outline option FD
UNITS
V
V
m
V/µs
mA
mA
V
mA
V
mA
µs
µC
µC
A
µs
µs
K/W
K/W
kN
kg
Notes:-
1) Unless otherwise indicated Tj=125°C.
2) The required maximum tq (specified with dVdr/dt=200V/µs) is represented by the 10th character in the device part number. See
ordering information for details of tq codes.
3) For other clamp forces, please consult factory
Notes on rupture rated packages.
This product is available with a non-rupture rated package.
For additional details on these products, please consult factory.
Provisional Data Sheet. Types R3968F#20x to R3968F#28x Issue 3
Page 2 of 12
October, 2007


Part Number R3968FD28N
Description Distributed Gate Thyristor
Maker IXYS
Total Page 12 Pages
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