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S0500KC25R Datasheet Preview

S0500KC25R Datasheet

Symmetrical Gate Turn-Off Thyristor

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S0500KC25R pdf
WESTCODE
An IXYS Company
Date:- 26 Jul, 2005
Data Sheet Issue:- 3
Symmetrical Gate Turn-Off Thyristor
Type S0500KC25#
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
2500
2600
100-2000
100-2000
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tjop
Tstg
RATINGS
Maximum peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQM, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6)
Minimum permissible off-time, ITM=ITGQM, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDRM, VDM<VDRM, diGQ/dt=20A/µs, CS=1µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
500
0.3
330
640
4.0
7.2
80
1000
160
5
100
18
90
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
kA2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type S0500KC25# Issue 3
Page 1 of 15
July, 2005



IXYS
IXYS

S0500KC25R Datasheet Preview

S0500KC25R Datasheet

Symmetrical Gate Turn-Off Thyristor

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S0500KC25R pdf
WESTCODE An IXYS Company
Characteristics
Symmetrical Gate Turn-Off Thyristor type S0500KC25#
VTM
IL
IH
dv/dtcr
IDM
IRM
IGKM
Parameter
Maximum peak on-state voltage
Latching current
Holding current
Critical rate of rise of off-state voltage
Peak off state current
Peak reverse current
Peak negative gate leakage current
VGT Gate trigger voltage
IGT Gate trigger current
td Delay time
tgt Turn-on time
tf Fall time
tgq Turn-off time
Igq Turn-off gate current
Qgq Turn-off gate charge
ttail Tail time
tgw Gate off-time (see note 3)
RthJK Thermal resistance junction to sink
F Mounting force
Wt Weight
MIN
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150
-
-
-
4.5
-
TYP MAX TEST CONDITIONS
2
5
5
-
-
-
-
0.9
0.8
0.7
1.5
0.5
0.1
1.5
3.5
0.8
10
185
1200
50
-
-
2.5 IG=2A, IT=500A
- Tj=25°C
- Tj=25°C
- VD=80%VDRM, VGR=-2V
30 Rated VDRM, VGR=-2V
60 Rated VRRM
200 VGR=-16V
- Tj=-40°C
- Tj=25°C
VD=25V, RL=25m
- Tj=125°C
6 Tj=-40°C
2 Tj=25°C
VD=25V, RL=25m
0.4 Tj=125°C
VD=50%VDRM, ITGQ=500A, IGM=10A, diG/dt=5A/µs
-
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD)
5 Conditions as for td, (10%IGM to 10%VD)
VD=80%VDRM, ITGQ=500A, CS=1µF,
-
diGQ/dt=20A/µs, VGR=-16V, (90%ITGQ to 10%IVD)
11 Conditions as for tf, (10%IGQ to 10%ITGQ)
- Conditions as for tf
1330 Conditions as for tf
75 Conditions as for tf, (10%ITGQ to ITGQ<1A)
- Conditions as for tf/
0.065 Double side cooled
- 0.24 Cathode side cooled
- 0.09 Anode side cooled
- 9.0 (see note 2)
120 -
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
µs
µs
A
µC
µs
µs
K/W
K/W
K/W
kN
g
Data Sheet. Type S0500KC25# Issue 3
Page 2 of 15
July, 2005


Part Number S0500KC25R
Description Symmetrical Gate Turn-Off Thyristor
Maker IXYS
Total Page 15 Pages
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