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S1200NC25V Datasheet Preview

S1200NC25V Datasheet

Symmetrical Gate Turn-Off Thyristor

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WESTCODE
An IXYS Company
Date:- 8 Apr, 2005
Data Sheet Issue:- 3
Symmetrical Gate Turn-Off Thyristor
Type S1200NC25#
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1).
Non-repetitive peak off-state voltage, (note 1).
Repetitive peak reverse voltage.
Non-repetitive peak reverse voltage.
MAXIMUM
LIMITS
2500
2600
100-2000
100-2000
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tjop
Tstg
RATINGS
Maximum peak turn-off current, (note 2).
Snubber loop inductance, ITM=ITGQM, (note 2).
Mean on-state current, Tsink=55°C (note 3).
Nominal RMS on-state current, 25°C (note 3).
Peak non-repetitive surge current tp=10ms.
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms.
Critical rate of rise of on-state current, (note 5).
Peak forward gate power.
Peak reverse gate power.
Peak forward gate current.
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2).
Minimum permissible on-time.
Operating temperature range.
Storage temperature range.
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=3µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1200
0.3
790
1600
13.0
23.0
840
1000
200
8
140
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
kA2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type S1200NC25# Issue 3
Page 1 of 15
April, 2005




IXYS

S1200NC25V Datasheet Preview

S1200NC25V Datasheet

Symmetrical Gate Turn-Off Thyristor

No Preview Available !

WESTCODE An IXYS Company
Characteristics
Symmetrical Gate Turn-Off Thyristor type S1200NC25#
VTM
IL
IH
dv/dtcr
IDM
IRM
IGKM
Parameter
Maximum peak on-state voltage.
Latching current.
Holding current.
Critical rate of rise of off-state voltage.
Peak off state current.
Peak reverse current.
Peak negative gate leakage current.
VGT Gate trigger voltage.
IGT Gate trigger current.
td Delay time.
tgt Turn-on time.
tf Fall time.
tgq Turn-off time.
Igq Turn-off gate current.
Qgq Turn-off gate charge.
ttail Tail time.
tgw Gate off-time (see note 3).
RthJK Thermal resistance junction to sink.
F Mounting force.
Wt Weight.
MIN
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
150
-
-
-
15
-
TYP MAX TEST CONDITIONS
2.4
10
10
-
-
-
-
1.0
0.9
0.8
2
0.5
0.05
1.5
4.5
1
19
300
4000
50
-
-
2.7 IG=2A, IT=1200A.
- Tj=25°C.
- Tj=25°C.
- VD=80%VDRM, VGR=-2V.
50 Rated VDRM, VGR=-2V
100 Rated VRRM
200 VGR=-16V
- Tj=-40°C.
- Tj=25°C.
VD=25V, RL=25m
- Tj=125°C.
7 Tj=-40°C.
2 Tj=25°C.
VD=25V, RL=25m
0.3 Tj=125°C.
VD=50%VDRM, ITGQ=1200A, IGM=20A, diG/dt=10A/µs
-
Tj=25°C, di/dt=300A/µs, (10%IGM to 90%VD).
8.0 Conditions as for td, (10%IGM to 10%VD).
VD=80%VDRM, ITGQ=1200A, CS=3µF,
-
diGQ/dt=20A/µs, VGR=-16V, (90%ITGQ to 10%IVD).
22 Conditions as for tf, (10%IGQ to 10%ITGQ).
- Conditions as for tf.
5000 Conditions as for tf.
75 Conditions as for tf, (10%ITGQ to ITGQ<1A).
- Conditions as for tf.
0.027 Double side cooled.
- 0.070 Cathode side cooled.
- 0.045 Anode side cooled.
- 25 (see note 2).
480 -
UNITS
V
A
A
V/µs
mA
mA
mA
V
V
V
A
A
A
µs
µs
µs
µs
A
µC
µs
µs
K/W
K/W
K/W
kN
g
Notes:-
1) Unless otherwise indicated Tj=125oC.
2) For other clamping forces, consult factory.
3) The gate off-time is the period during which the gate circuit is
required to remain low impedance to allow for the passage
of tail current.
Data Sheet. Type S1200NC25# Issue 3
Page 2 of 15
April, 2005


Part Number S1200NC25V
Description Symmetrical Gate Turn-Off Thyristor
Maker IXYS
Total Page 15 Pages
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