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T0160NB45A Datasheet Preview

T0160NB45A Datasheet

Insulated Gate Bi-Polar Transistor

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Date:- 6 Nov, 2015

Data Sheet Issue:- 2

Insulated Gate Bi-Polar Transistor

Type T0160NB45A

Absolute Maximum Ratings

VCES

VDC link

VGES

VOLTAGE RATINGS

Collector – emitter voltage

Permanent DC voltage for 100 FIT failure rate.

Peak gate – emitter voltage

MAXIMUM

LIMITS

4500

2800

±20

UNITS

IC(DC)

ICRM

IF(DC)

IFRM

IFSM

IFSM2

PMAX

(di/dt)cr

Tstg

RATINGS

DC collector current, IGBT

Repetitive peak collector current, tp=1ms, IGBT

Continuous DC forward current, Diode

Repetitive peak forward current, tp=1ms, Diode

Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4)

Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4)

Maximum power dissipation, IGBT (Note 2)

Critical diode di/dt (note 3)

Operating temperature range.

Storage temperature range.

Notes: -

1) Unless otherwise indicated Tj = 125ºC.

2) Tsink = 25°C, double side cooled.

3) Maximum commutation loop inductance 200nH.

4) Half-sinewave, 125°C T j initial.

MAXIMUM

LIMITS

160

320

160

320

690

760

1.47

300

-40 to +125

UNITS

A/µs

°C

Data Sheet T0160NB45A Issue 2

Page 1 of 7

November, 2015

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Insulated Gate Bi-Polar Transistor

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Characteristics

Insulated Gate Bi-polar Transistor Type T0160NB45A

IGBT Characteristics

PARAMETER

VCE(sat) Collector – emitter saturation voltage

VT0

VGE(TH)

ICES

IGES

Cies

td(on)

tr(V)

Qg(on)

Eon

td(off)

tf(I)

Qg(off)

Eoff

Threshold voltage

Slope resistance

Gate threshold voltage

Collector – emitter cut-off current

Gate leakage current

Input capacitance

Turn-on delay time

Rise time

Turn-on gate charge

Turn-on energy

Turn-off delay time

Fall time

Turn-off gate charge

Turn-off energy

ISC Short circuit current

MIN

TYP

2.70

3.40

5.2

2.4

3.2

1.2

1.1

2.3

2.5

1.5

0.7

550

MAX

3.15

3.80

1.71

13.1

±4

TEST CONDITIONS

IC = 160A, VGE = 15V, Tj = 25°C

IC = 160A, VGE = 15V

Current range: 53.3 – 160A

VCE = VGE, IC = 18mA

VCE = VCES, VGE = 0V

VGE = ±20V

VCE = 25V, VGE = 0V, f = 1MHz

IC =160A, VCE =2800V, di/dt=300A/µs

VGE = ±15V, Ls=200nH

Rg(ON)= 33Ω, Rg(OFF)=38Ω, CGE=22nF

Integral diode used as freewheel diode

(Note 3 & 4)

VGE=+15V, VCC=2800V, VCEmax≤VCES,

tp≤10µs

UNITS

mΩ

µA

µs

µC

µs

µC

Diode Characteristics

PARAMETER

VF Forward voltage

VTo Threshold voltage

rT Slope resistance

Irm Peak reverse recovery current

Qrr Recovered charge

trr Reverse recovery time, 50% chord

Er Reverse recovery energy

MIN

TYP

3.65

3.90

165

270

1.8

0.38

MAX

3.95

4.20

2.28

TEST CONDITIONS

IF = 160A, Tj =25°C

IF = 160A

Current range 53.3 - 160A

IF = 160A, VGE = -15V, di/dt=300A/µs

UNITS

mΩ

µC

µs

Thermal Characteristics

PARAMETER

RthJK Thermal resistance junction to sink, IGBT

RthJK Thermal resistance junction to sink, Diode

F Mounting force

Wt Weight

MIN

TYP

0.5

MAX

118

186

172

268

478

TEST CONDITIONS

Double side cooled

Collector side cooled

Emitter side cooled

Double side cooled

Cathode side cooled

Anode side cooled

Note 2

UNITS

K/kW

Notes:-

1) Unless otherwise indicated Tj=125°C.

2) Consult application note 2008AN01 for detailed mounting requirements

3) CGE is additional gate – emitter capacitance added to output of gate drive

4) Figures 6 to 9 are obtained using integral diode as freewheeling diode

Data Sheet T0160NB45A Issue 2

Page 2 of 7

November, 2015

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Insulated Gate Bi-Polar Transistor

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