T2400GB45E Datasheet - IXYS

T2400GB45E Insulated Gate Bi-Polar Transistor

Date:- 11 Dec, 2018 Data Sheet Issue:- 4 Insulated Gate Bi-Polar Transistor Type T2400GB45E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector emitter voltage Permanent DC voltage for 100 FIT failure rate. Peak gate emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC ICRM IECO PMAX Tj op Tstg RATINGS Continuous DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) M.

T2400GB45E Datasheet (663.31 KB)