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IXYS
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VUO80-12NO1 Datasheet Preview

VUO80-12NO1 Datasheet

Standard Rectifier Module

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VUO80-12NO1 pdf
Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO80-12NO1
4/5
6 8 10
1/2
VUO80-12NO1
3~
Rectifier
VRRM =
I DAV =
I FSM =
1200 V
80 A
600 A
Features / Advantages:
Package with DCB ceramic
Reduced weight
Improved temperature and power cycling
Planar passivated chips
Very low forward voltage drop
Very low leakage current
Applications:
Diode for main rectification
For three phase bridge configurations
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Package: V1-A-Pack
Isolation Voltage: 3600 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Height: 17 mm
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b



IXYS
IXYS

VUO80-12NO1 Datasheet Preview

VUO80-12NO1 Datasheet

Standard Rectifier Module

No Preview Available !

VUO80-12NO1 pdf
Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
forward voltage drop
bridge output current
VR = 1200 V
VR = 1200 V
IF = 30 A
IF = 90 A
IF = 30 A
IF = 90 A
TC = 110°C
rectangular
d=
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VUO80-12NO1
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125°C
TVJ = 150°C
Ratings
min. typ. max. Unit
1300 V
1200 V
40 µA
1.5 mA
1.14 V
1.48 V
1.06 V
1.51 V
80 A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.81 V
7.8 m
1.1 K/W
0.3 K/W
110 W
600 A
650 A
510 A
550 A
1.80 kA²s
1.76 kA²s
1.30 kA²s
1.26 kA²s
18 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130515b


Part Number VUO80-12NO1
Description Standard Rectifier Module
Maker IXYS
Total Page 5 Pages
PDF Download
VUO80-12NO1 pdf
VUO80-12NO1 Datasheet PDF
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