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IXYS Corporation

32N50Q Datasheet Preview

32N50Q Datasheet

IXFR32N50Q

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HiPerFETTM Power MOSFETs
ISOPLUS247TM
IXFR 30N50Q
(Electrically Isolated Back Surface) IXFR 32N50Q
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
VDSS
ID25
500 V 29 A
500 V 30 A
trr £ 250 ns
RDS(on)
0.16 W
0.15 W
Preliminary data
Symbol
VDSS
VDGR
VGS
VGSM
ID25
I
DM
I
AR
EAS
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
500
500
±20
±30
TC = 25°C
T
C
=
25°C,
Pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
TC = 25°C
30N50
32N50
30N50
32N50
30N50
32N50
30
120
30
1.5
45
5
310
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
50/60 Hz, RMS t = 1 minute leads-to-tab
2500
6
V
V
V
V
A
A
A
J
mJ
V/ns
W
°C
°C
°C
°C
V~
g
ISOPLUS 247TM
E 153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Symbol
Test Conditions
VDSS
V
GS(th)
IGSS
IDSS
RDS(on)
VGS = 0 V, ID = 1mA
V = V , I = 4mA
DS GS D
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 1, 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2 4V
±100 nA
TJ = 25°C
TJ = 125°C
30N50
32N50
100 mA
1 mA
0.16 W
0.15 W
Applications
DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98608B (7/00)
1-4




IXYS Corporation

32N50Q Datasheet Preview

32N50Q Datasheet

IXFR32N50Q

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IXFR 30N50Q
IXFR 32N50Q
Symbol
g
fs
Ciss
Coss
C
rss
td(on)
t
r
td(off)
t
f
Q
g(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = I
DS D T
Note 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
V = 10 V, V = 0.5 • V , I = I
GS DS DSS D T
RG = 1 W (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
18 28
S
3950
640
210
pF
pF
pF
35 ns
42 ns
75 ns
20 ns
150 nC
26 nC
85 nC
0.40 K/W
0.15 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V, Note 1
trr
IF = Is,
QRM
-di/dt = 100 A/ms,
V = 100 V
R
I
RM
32 A
128 A
1.5 V
250 ns
0.75 mC
7.5 A
Note: 1.
Note: 2.
IT test condition:
IXFR30N50: IT = 15A
IXFR32N50: IT = 16A
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
S 13.21 13.72
T 15.75 16.26
U 1.65 3.03
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4


Part Number 32N50Q
Description IXFR32N50Q
Maker IXYS Corporation
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