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DE275-101N30A - RF Power MOSFET

Features

  • min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ VGS = 0 V, ID = 3 ma VDS = VGS, ID = 250 µa VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test typ. max. 100 V V nA µA µA Ω S +175 °C °C +175 °C °C g.
  • Isolated Substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 Maximum Ratings 100 100 ±20 ±30 30.0 240 TBD TBD 5.5 >200 550 V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = ≤ = 100 V 30.0 A 0.06 Ω 550 W RDS(on) PDC PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C DRAIN 270 3.5 0.25 0.53 Characteristic Values TJ = 25°C unless otherwise specified SD1 SD2 Features min.
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