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DE275-201N25A - RF Power MOSFET

Features

  • Isolated Substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power.
  • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 VDSS ID25 RDS(on) Maximum Ratings 200 200 ±20 ±30 25 150 25 20 5 >200 590 V V V V A A A mJ V/ns GATE = = = = 200 V 25 A 0.13 Ω 590 W PDC DRAIN V/ns W W W C/W C/W SG1 SG2 SD1 SD2 PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25°C Derate 1.9W/°C above 25°C Tc = 25°C 284 3.0 0.25 0.53 Characteristic Values min. 200 2.5 3.0 5.5 ±100 50 1 .
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