* PDAMB
* Isolated Substrate
* high isolation voltage (>2500V)
* excellent thermal transfer
* Increased temperature and power
* cycling capability IXYS advanced low Qg process easier to drive faster s
DE275X2-102N06A Datasheet (105.55 KB)
DE275X2-102N06A
IXYS Corporation
105.55 KB
Rf power mosfet.
Directed Energy, Inc. An DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet IXYS Company Comm.
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