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DE275X2-102N06A - RF Power MOSFET

Features

  • PDAMB.
  • Isolated Substrate.
  • high isolation voltage (>2500V).
  • excellent thermal transfer.
  • Increased temperature and power.
  • cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
DE275X2-501N16A RF Power MOSFET
DE275-101N30A RF Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet IXYS Company Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS ID25 RDS(on) PDHS = = = = 1000 V 6A 2.0 Ω 750 W The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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