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DESC29-06AC - HiPerFRED Epitaxial Diode

Features

  • l TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 95 2500 1165 / 2.411 3 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (.

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www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION DSEC29-06AC HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface IFAV = 2x15 A VRRM = 600 V trr = 35 ns VRSM V 600 VRRM V 600 Type ISOPLUS220TM 1 1 2 3 2 3 Isolated back surface * * Patent pending DSEC29-06AC Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 140°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 15 110 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C W V~ N / lb g Applications l l l l l l l l Features l TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA Mounting force typical 95 2500 11...65 / 2.4...
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