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IXYS Corporation

DGS20-025A Datasheet Preview

DGS20-025A Datasheet

(DGSx0-02xA) Gallium Arsenide Schottky Rectifier

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DGS 20-022A DGSK 40-022A
DGS 20-025A DGSK 40-025A
Gallium Arsenide Schottky Rectifier
Preliminary Data
IFAV = 18 A
VRRM = 220/250 V
CJunction = 26 pF
V
RSM
V
220
250
VRSM
V
220
250
V
RRM
V
220
250
VRRM
V
220
250
Type
DGS 20-022A
DGS 20-025A
Type
Single
DGSK 40-022A
DGSK 40-025A
Common cathode
AC
AC A
TO-220 AC C
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
TO-220 AB A
C
A
C (TAB)
Symbol
IFAV
IFAV
IFSM
TVJ
Tstg
Ptot
Md
Conditions
TC = 25°C; DC
TC = 90°C; DC
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TC = 25°C
mounting torque
Symbol
IR
VF
CJ
RthJC
RthCH
Weight
Conditions
TVJ = 25°C VR = VRRM
TVJ = 125°C VR = VRRM
IF = 7.5 A;
IF = 7.5 A;
TVJ = 125°C
TVJ = 25°C
VR = 100 V; TVJ = 125°C
Maximum Ratings
18 A
13 A
30 A
-55...+175
-55...+150
°C
°C
48 W
0.4...0.6
Nm
Features
q Low forward voltage
q Very high switching speed
q Low junction capacity of GaAs
- low reverse current peak at turn off
q Soft turn off
q Temperature independent switching
behaviour
q High temperature operation capability
q Epoxy meets UL 94V-0
Applications
q MHz Switched mode power supplies
(SMPs)
q Small size SMPs
q High frequency converters
q Resonant converters
Characteristic Values
typ. max.
2.0 mA
2.0 mA
1.3
1.2 1.5
V
V
26 pF
3.1 K/W
0.5 K/W
2g
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2001 IXYS All rights reserved
1-2




IXYS Corporation

DGS20-025A Datasheet Preview

DGS20-025A Datasheet

(DGSx0-02xA) Gallium Arsenide Schottky Rectifier

No Preview Available !

DGS 20-022A DGSK 40-022A
DGS 20-025A DGSK 40-025A
30
10
A
IF
1
300
pF
CJ
100
TVJ =
0.1 125°C
25°C
0.01
0.0 0.5 1.0 1.5 2.0 V 2.5
VF
Fig. 1 typ. forward characteristics
TVJ = 125°C
10
0.1 1 10 100 V 1000
VR
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
ZthJC
0.1
Single Pulse
Outline (center pin only for DGSK types)
0.01
0.00001
0.0001
0.001
0.01
Fig. 3 typ. thermal impedance junction to case
0.1
DGS10-015/018BS
1s
t
10
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to VFR
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.38 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
© 2001 IXYS All rights reserved
2-2


Part Number DGS20-025A
Description (DGSx0-02xA) Gallium Arsenide Schottky Rectifier
Maker IXYS Corporation
Total Page 2 Pages
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