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DSEC16-06BC - (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220

Download the DSEC16-06BC datasheet PDF. This datasheet also covers the DSEA16-06BC variant, as both devices belong to the same (dsea16-06bc / dsec16-06bc) hiperdynfred epitaxial diode isoplus220 family and are provided as variant models within a single manufacturer datasheet.

Features

  • z 1.6 mm (0.063 in) from case for 10 s TC = 25°C 50/60 Hz RMS; IISOL ≤ 1 mA mounting force with clip 260 60 2500 1165 / 2.515 2 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode to tab capacitance (.

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Note: The manufacturer provides a single datasheet file (DSEA16-06BC_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number DSEC16-06BC
Manufacturer IXYS (Littelfuse)
File Size 568.78 KB
Description (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220
Datasheet download datasheet DSEC16-06BC Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM V 600 600 VRRM V 600 600 DSEA 16-06BC DSEC 16-06BC 1 2 3 DSEA IFAV VRRM trr DSEA 16-06BC DSEC 16-06BC = 2x8 A = 600 V = 30 ns ISOPLUS220TM E153432 2 3 Type 1 DSEC G D S Isolated back surface Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg TL Ptot VISOL FC Weight Conditions TC = 110°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 0.9 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 19 8 50 0.1 0.1 -55...+175 175 -55...+150 A A A mJ A °C °C °C °C W V~ N / lb g Applications z z z z z z z z Features z 1.6 mm (0.
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