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IXYS Corporation

DSEE30-12A Datasheet Preview

DSEE30-12A Datasheet

HiPerFRED Epitaxial Diode

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ADVANCE TECHNICAL INFORMATION
DSEE30-12A
HiPerFREDTM Epitaxial Diode
IFAV =
VRRM =
trr =
30 A
1200 Vc
30 ns
VRRMc
V
1200
VRRM
V
600
Type
DSEE30-12A
123
TO-247 AD
1
2
3
Symbol
IFRMS
IFAVM c
IFSM
EAS
IAR
TVJ
TVJM
Tstg
TL
Ptot
Md
Weight
Conditions
TC = 90°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
VA = 1.5· VR typ.; f = 10 kHz; repetitive
1.6 mm (0.063 in) from case for 10 s
TC = 25°C
Mounting Torque
typical
Maximum Ratings
60 A
30 A
200 A
0.2 mJ
0.1 A
-55...+175
175
-55...+150
°C
°C
°C
260 °C
165 W
0.9/6 Nm/ lb.in.
2g
Symbol
IRcd
VF e
RthJC
RthCH
trr
IRM
Conditions
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 30 A; TVJ = 125°C
TVJ = 25°C
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
Characteristic Values
typ. max.
200 µA
2 mA
1.75 V
2.5 V
0.9 K/W
0.25 K/W
30 ns
4A
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
c Diodes connected in series
d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
Features
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Notes
Please see DSEP 30-06A Data Sheet
for characteristic curves.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
DS98962 (10/02)




IXYS Corporation

DSEE30-12A Datasheet Preview

DSEE30-12A Datasheet

HiPerFRED Epitaxial Diode

No Preview Available !

DSEE30-12A
TO-247 AD Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
A1 2.2 2.54
A2 2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025


Part Number DSEE30-12A
Description HiPerFRED Epitaxial Diode
Maker IXYS Corporation
Total Page 2 Pages
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