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IXYS Corporation

DSEP29-06B Datasheet Preview

DSEP29-06B Datasheet

HiPerFREDTM Epitaxial Diode with soft recovery

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HiPerFREDTM Epitaxial Diode
with soft recovery
DSEP 29-06A
DSEP 29-06B
IFAV = 30 A
VRRM = 600 V
trr = 30/35 ns
VRSM
V
600
600
VRRM
V
600
600
Type
DSEP 29-06A
DSEP 29-06B
TO-220 AC
AC
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
Maximum Ratings
rect., d = 0.5; TC (Version A) = 135°C
TC (Version B) = 125°C
TVJ = 45°C; tp = 10 ms (50 Hz), sine; (Version A)
(Version B)
35
30
30
250
200
A
A
A
A
A
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.2
0.1
-55...+175
175
-55...+150
mJ
A
°C
°C
°C
TC = 25°C
mounting torque
165
0.4...0.6
W
Nm
typical
2g
Symbol
IR x
VF y
RthJC
RthCH
trr typ.
IRM typ.
Conditions
Characteristic max. Values
Version A Version B
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 30 A; TVJ = 150°C
TVJ = 25°C
typ.
250 250 µA
1 2 mA
1.26 1.58 V
1.61 2.52 V
0.9 0.9 K/W
0.5 0.5 K/W
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
35
6
30 ns
4A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
Features
q International standard package
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low IRM-values
q Soft recovery behaviour
q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency
switching devices
q Antisaturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q Avalanche voltage rated for reliable
operation
q Soft reverse recovery for low
EMI/RFI
q Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
1-3




IXYS Corporation

DSEP29-06B Datasheet Preview

DSEP29-06B Datasheet

HiPerFREDTM Epitaxial Diode with soft recovery

No Preview Available !

DSEP 29-06A
70
A
60
IF 50
40
30
TVJ=150°C
TVJ=100°C
20
10
TVJ=25°C
0
0.0 0.5 1.0 1.5 V2.0
VF
Fig. 1 Forward current I versus V
FF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
3000
nC
TVJ= 100°C
VR = 300V
2500
Qr
2000
1500
1000
IF= 60A
IF= 30A
IF= 15A
500
0
100 A/µs 1000
-diF/dt
Fig. 2 Reverse recovery charge Q
r
versus -diF/dt
130
ns
120
trr
110
100
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
90
80
0.0
0
40 80 120 °C 160
TVJ
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
1
K/W
70
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 5 Recovery time trr versus -diF/dt
0.1
ZthJC
50
A
TVJ= 100°C
VR = 300V
IRM 40
30 IF= 60A
IF= 30A
IF= 15A
20
10
0
0 200 400 600 A8/0µ0s 1000
-diF/dt
Fig. 3 Peak reverse current I
RM
versus -diF/dt
20 1.2
V
VFR
15
tfr
VFR
µs
tfr
0.9
10 0.6
5 0.3
TVJ= 100°C
IF = 30A
0
0 200 400
0.0
600 A80/µ0s 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1 0.502
2 0.193
3 0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
0.0001
0.001
0.01
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
0.1
DSEP 29-06A
s1
t
2-3


Part Number DSEP29-06B
Description HiPerFREDTM Epitaxial Diode with soft recovery
Maker IXYS Corporation
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DSEP29-06B Datasheet PDF






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