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FDM21-05QC - Power MOSFET

Key Features

  • Q-Class Power MOSFET technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness.
  • HiPerDynTM FRED - consisting of series connected diodes - enhanced dynamic behaviour for high frequency operation.

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FDM100-0045SP Buck Chopper

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Q-Class Power MOSFETs Chopper Topologies in ISOPLUS i4-PACTM Preliminary data FMD 3 4 1 2 FMD 21-05QC FDM 21-05QC ID25 = 21 A VDSS = 500 V RDSon typ. = 190 mΩ FDM 3 5 4 2 1 5 MOSFET Symbol VDSS VGS ID25 ID90 Symbol RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf R thJC RthJH Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C Maximum Ratings 500 V ±20 V 21 A 15 A Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID90 VDS = 20 V; ID = 0.25 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 0.5 • VDSS; ID = 14 A 220 mΩ 2.5 4.5 V 250 µA 250 µA 200 nA 95 nC 20 nC 42 nC VGS= 10 V; VDS = 0.