* HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode
* ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink -
FMM75-01F Datasheet (61.61 KB)
FMM75-01F
IXYS Corporation
61.61 KB
Power mosfet.
FMM 75-01F HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM ID25 = 75 A VDSS = 100 V RDSontyp. = 18 mΩ Preliminary data 3 T1 5 4 T.
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