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Advance Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTP 1R6N50P IXTY 1R6N50P
VDSS ID25
RDS(on)
= 500 = 1.6 ≤ 6.5
V A Ω
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Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 50 Ω TC = 25°C
Maximum Ratings TO-252 (IXTY) 500 500 ± 30 ± 40 1.6 2.5 1.6 5 75 10 43 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns
G G S (TAB) TAB
TO-220 (IXTP)
W °C °C °C °C °C
D S
(TAB) D = Drain TAB = Drain
G = Gate S = Source
1.6 mm (0.062 in.
ITXY1R6N50P Datasheet
