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IXBH10N170 Datasheet, IXYS Corporation

IXBH10N170 Datasheet, IXYS Corporation

IXBH10N170

datasheet Download (Size : 622.84KB)

IXBH10N170 Datasheet

IXBH10N170 transistor

bipolar mos transistor.

bipolar mos transistor.

IXBH10N170

datasheet Download (Size : 622.84KB)

IXBH10N170 Datasheet

IXBH10N170 Features and benefits

IXBH10N170 Features and benefits

z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3.

IXBH10N170 Application

IXBH10N170 Application

z z z BVCES VGE(th) ICES IGES VCE(sat) IC = 250 µA, VGE = 0 V Temperature Coefficent IC = 250 µA, VCE = VGE Temperatur.

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TAGS

IXBH10N170
Bipolar
MOS
Transistor
IXYS Corporation

Manufacturer


IXYS Corporation

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