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IXYS Corporation

IXDI430 Datasheet Preview

IXDI430 Datasheet

(IXDx430) 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

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IXDN430 / IXDI430 / IXDD430 / IXDS430
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected
• High Peak Output Current: 30A Peak
• Wide Operating Range: 8.5V to 35V
• Under Voltage Lockout Protection
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 5600 pF in <25ns
www.DataSheeMt4aUt.cchomed Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON / OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Limiting di/dt Under Short Circuit
• Class D Switching Amplifiers
General Description
The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high
current gate drivers specifically designed to drive MOSFETs
and IGBTs to their minimum switching time and maximum
practical frequency limits. The IXD_430 can source and sink
30A of peak current while producing voltage rise and fall times
of less than 30ns. The input of the drivers are compatible with
TTL or CMOS and are fully immune to latch up over the entire
operating range. Designed with small internal delays, cross
conduction/current shoot-through is virtually eliminated in all
configurations. Their features and wide safety margin in
operating voltage and power make the drivers unmatched in
performance and value.
The IXD_430 incorporates a unique ability to disable the output
under fault conditions. The standard undervoltage lockout is at
12.5V which can also be set to 8.5V in the IXDS430SI. When a
logical low is forced into the Enable inputs, both final output
stage MOSFETs (NMOS and PMOS) are turned off. As a
result, the output of the IXDD430 enters a tristate mode and
enables a Soft Turn-Off of the MOSFET when a short circuit is
detected. This helps prevent damage that could occur to the
MOSFET if it were to be switched off abruptly due to a dv/dt
over-voltage transient.
The IXDN430 is configured as a noninverting gate driver, and the
IXDI430 is an inverting gate driver. The IXDS430 can be configured
either as a noninverting or inverting driver. The IXD_430 are available
in the standard 28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the
TO-263 (YI) surface mount packages. CT or 'Cool Tab' for the 28-
pin SOIC package refers to the backside metal heatsink tab.
Ordering Information
Part Num ber
Package Type
IX D D 4 3 0 Y I
5-pin TO -263
IX D D 4 3 0 C I
5-pin TO -220
IX D I4 3 0 Y I
5-pin TO -263
IX D I4 3 0 C I
5-pin TO -220
IX D N 4 3 0 Y I
5-pin TO -263
IX D N 4 3 0 C I
5-pin TO -220
IX D S 4 3 0 S I
28-pin S O IC
Temp. Range
-55°C to +125°
C o n fig u ra tio n
N on Inverting with
E nable
-55°C to +125°
In v e rtin g
-55°C to +125°
N on Inverting
-55°C to +125°
Inverting / N on
Inverting w ith E nable
and UVSEL
Copyright © IXYS CORPORATION 2004
First Release
DS99045B(8/04)




IXYS Corporation

IXDI430 Datasheet Preview

IXDI430 Datasheet

(IXDx430) 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver

No Preview Available !

Vcc
IN
EN
www.DataSheet4U.com
GND
Vcc
IN
IXDN430 / IXDI430 / IXDD430 / IXDS430
Figure 1A - IXDD430 (Non Inverting With Enable) Diagram
400k
Vcc
1K OUT P
OUT N
Figure 1B - IXDN430 (Non-Inverting) Diagram
1K
GND
Vcc
OUT P
OUT N
GND GND
Figure 1C - IXDI430 (Inverting) Diagram
Vcc
Vcc
IN 1K
OUT P
OUT N
GND
Figure 1D - IXDS430 (Inverting and Non Inverting with Enable) Diagram
Vcc
GND
Vcc
IN
EN
INV
1K
400K
400K
GND
Note: Out P and Out N are connected together in the 5 lead TO-220 and TO-263 packages.
2
OUT P
OUT N
GND


Part Number IXDI430
Description (IXDx430) 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
Maker IXYS Corporation
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