IXDI430 Datasheet | IXYS

IXDN430 / IXDI430 / IXDD430 / IXDS430 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver Features - Built using the advantages and patibility of CMOS and IXYS HDMOSTM processes - Latch-Up Protected - High Peak Output Current: 30A Peak - Wide Operating Range: 8.5V to 35V - Under Voltage Lockout Protection - Ability to Disable Output under Faults - High Capacitive Load Drive Capability: 5600 p F in <25ns .. - Matched Rise And Fall Times - Low Propagation Delay Time - Low Output Impedance - Low Supply Current General Description The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high current gate drivers specifically designed to drive MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXD_430 can source and sink 30A of peak current while producing voltage rise and fall times of less than 30ns. The input of the drivers are patible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in all configurations. Their Features and wide safety margin in operating voltage and power make the drivers unmatched in performance and value. The IXD_430 incorporates a unique ability to disable the output under fault conditions. The standard undervoltage lockout is at 12.5V which can also be set to 8.5V in the IXDS430SI. When a logical low is forced into the Enable inputs, both final output stage MOSFETs (NMOS and PMOS) are turned off. As a result, the output of the IXDD430 enters a tristate mode and enables a Soft Turn-Off of the MOSFET when a short circuit is detected. This helps prevent damage that could occur to the MOSFET if it were to be switched off abruptly due to a dv/dt over-voltage transient. The IXDN430 is configured as a noninverting gate driver, and the IXDI430 is an inverting gate driver. The IXDS430 can be configured either as a noninverting or inverting driver. The IXD_430 are...