IXEN60N120D1 - NPT3 IGBT in miniBLOC package
= 2.1 V C G G C miniBLOC, SOT-227 B E153432 G E E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V
IXEN60N120D1 Features
* NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits
* optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current
