IXER35N120D1 - NPT3 IGBT with Diode
C G = 50 A = 1200 V = 2.2 V ISOPLUS 247TM E153432 G C E E G = Gate Isolated Backside * C = Collector E = Emitter *Patent pending IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive TC = 25°C
IXER35N120D1 Features
* NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits
* HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current
